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Characterization of CIAE developed double-sided silicon strip detector for charged particles

【摘要】Adouble-sidedsiliconstripdetector(DSSD)withactiveareaof48mm48mmandthicknessof300lmhasbeendeveloped.EachsideofDSSDconsistsof48strips,eachwithwidthof0.9mmandinter-stripseparationof0.1mm.Electricalpropertiesanddetectionperformancesincludingfulldepletionbiasvoltage,reverseleakagecurrent,risetime,energyresolutionandcrosstalkhavebeenstudied.Atabiasof80V,leakagecurrentineachstripislessthan15nA,andrisetimeforalphaparticleat5157keVisapproximately15nsonbothsides.Goodenergyresolutionshavebeenachievedwith0.65–0.80%forthejunctionstripsand0.85–1.00%fortheohmicstrips.Thecrosstalkisfoundtobenegligibleonbothsides.TheoverallgoodperformanceofDSSDindicatesitsreadinessforvariousnuclearphysicsexperiments.

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143 共6页 核技术:英文版 2018年5期 免费 中文科技期刊数据库

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